Eva S. Ferre-Pikal, Fred L. Walls, and Craig W. Nelson
ABSTRACT
In this paper we discuss guidelines for designing linear bipolar junction transistor amplifiers with low 1/f amplitude modulation (AM) and phase modulation (PM) noise. These guidelines are derived from a new theory that relates AM and PM noise to transconductance fluctuations, junction capacitance fluctuations, and circuit architecture. We analyze the noise equations of each process for a common emitter (CE) amplifier and use the results to suggest amplifier designs that minimize the 1/f noise while providing other required attributes such as high gain. Although we use a CE amplifier as an example, the procedure applies to other configurations as well. Experimental noise results for several amplifier configurations are presented.1997 IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 44:335-343
© 1997, by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.