ABSTRACT A thin PbTiO3-n-p{+} silicon switch diode has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The diode has a rapid response time of 0.65 µs compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. In this paper, we have analyzed the rapid switching transient response by using heat conduction and switching theory successfully. The experimental results are in agreement with the theoretical analysis.
1999 IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control Vol. 46, pp. 502-510, 1999
© 1999, by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.