Low Temperature Preparation of Bismuth-Related Ferroelectrics Powder and Thin Films by Hydrothermal Synthesis

ABSTRACT Bi₄Ti₃O₁₂ (BIT) thin films were prepared by low temperature hydrothermal synthesis on Pt/TiO_x/SiO₂/Si. Bi₄Ti₃O₁₂ or TiO₂ gel solution was formed and annealed at 350°C. The BIT thin films were crystallized as a Bi-layer structural ferroelectric. During the hydrothermal treatment, the TiO₂ anatase (101) peak appears and seems to play the role as an intermediate layer. Randomly oriented BIT thin films were obtained. As a result, the BIT thin films have ferroelectric property. The as-deposited BIT thin films include spherical grains with the grain size of 120 nm.

Digital Object Identifier 10.1109/TUFFC.2007.586

© 2007, by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.

Back to Table of Contents