ABSTRACT Characteristics of metal-ferroelectrics-metal (MFM) capacitors and metal-ferroelectrics-insulator-semi- conductor (MFIS) diodes with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer films thinner than 100 nm were investigated. The films were prepared by spin-cast process and were annealed at 140°C in air for crystallization. The ferroelectric properties are equivalent to those of oxide ferroelectrics, even under low voltage or high frequency operation.
Digital Object Identifier 10.1109/TUFFC.2007.583
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