Improvement in Dielectric and Tunable Properties of Fe-Doped Ba_0.6Sr_0.4TiO₃ Thin Films Grown by Pulsed-Laser Deposition

ABSTRACT Fe-doped Ba_0.6Sr_0.4TiO₃ (BST) thin films were prepared on Pt/Si substrates by the pulsed-laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without causing the significant reduction of the tunability. The leakage current of BST thin films also was reduced by the addition of Fe dopants. BST thin films doped with 0.3 mol% Fe ions show a minimum dielectric loss of 0.88% at 10⁶ Hz, which is 1.7% for the undoped BST films. Moreover, the 0.3 mol% Fe-doped BST films reveal a maximum figure of merit (FOM) of 51, indicating the improved comprehensive dielectric and tunable properties.

Digital Object Identifier 10.1109/TUFFC.2007.580

© 2007, by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.

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