ABSTRACT We discuss key technologies of 180-nm node ferroelectric memories, whose process integration is becoming extremely complex when device dimension shrinks into a nano scale. This is because process technology in ferroelectric integration does not extend to conventional shrink technology due to many difficulties of coping with metal-insulator-metal (MIM) capacitors. The key integration technologies in ferroelectric random access memory (FRAM) comprise: etching technology to have less plasma damage; stack technology for the preparation of robust ferroelectrics; capping technology to encapsulate cell capacitors; and vertical conjunction technology to connect cell capacitors to the plate line. What has been achieved from these novel approaches is not only to have a peak-to-peak value of 675 mV in bit-line potential but also to ensure a sensing margin of 300 mV in opposite-state retention, even after 1000 hour suffering at 150°C.
Digital Object Identifier 10.1109/TUFFC.2007.573
© 2007, by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.