Influence of Silicon Dioxide-Silicon Interface Trap Charges on the Performance of Monolithic Metal-Zinc Oxide-Silicon Nitride-Silicon Dioxide-Silicon Convolver

ABSTRACT An enhancement in the convolution efficiency is obtained by annihilating the SiO₂-Si interface trap charges in the metal-ZnO-Si₃N₄-SiO₂-Si convolver structure. The annealing process uses a source of hydrogen created underneath the SiO₂-Si interface by implanting H⁺₃ ion followed by rapid thermal anneal of 5s at 900°C. The silicon nitride layer is inducted to protect ZnO films from hydrogen influx during low temperature oxygen anneal.

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